Paul_Cristian_LUNGU_Filme_nanostructurate_prin_TVA_-_LUNGU_C-1.pdf

7/21/2019 Paul_Cristian_LUNGU_Filme_nanostructurate_prin_TVA_-_LUNGU_C-1.pdf

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C. P. Lungu

1

, I. Jepu

1

, C. Porosnicu

1

, A.Anghel1, A.M.Lungu1, P. Chiru1, C.Ticos1, I.

Mustata1, V. Kuncser2, V. Ionescu3, V.

Ciupina3, M. Osiac, !.". Iaco#escu

$il%e nanostructurate &unctionale

o#tinute prin %eto'a arculuiter%oionic in (i'

1INCD pentru Fizica Laserilor, Plasmei si Radiatiei,

2INCD pentru Fizica Materialelor,

3Universitatea !vidius" din Constanta,

#

Facultatea de Fizica, Universitatea Craiova din Craiova


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PRINS

Metoda Arcului Termoionic in Vid (TVA);

Filme GMR/TMR multistrat ;

Filme tribologice

Filme pentru tehnologii nucleare


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Vid inalt 10! Torr

Principiul %eto'ei arcului ter%oionic in (i' )TVA*


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Aprinderea plasmei TVA


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Simetrie cilindrica TV


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Forma plasmei si

controlul energetic al

ionilor

"ptimi#area parametrilor plasmei TVA


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Caracteristicile I-V ale unei plasme TVA in vapori de Ag si Cu, pentrudiferite distante intre anod si catod, curentul pe filament fiind constant


Cu


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Caracteristicile I-V ale plasmei TVA in vapori de Ag si Cu pentrudiferiti curenti de filament, distanta anod catod fiind constanta



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Principalele avantaje ale metodei

TV

Puritatea ridicata a straturilor (datorita viduluiinalt in care se efectueaza depunerea)

Filmele cresc din plasma creat in vaporii puri

ai materialului depus;Filmele sunt bombardate continuu de ioni

energetici de aceeasi natura cu cei ai filmuluidepus;

Energia ionilor poate fi controlata prin reglareatemperaturii catodului si tensiunea anod -catod


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Depuneri Multistrat

Sistemul Anodic pentru depunerea multistrat


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Depuneri Multistrat


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Depuneri Multistrat


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Sticla/ Siliciu

a

!o " !u " #g$a

Depuneri Multistrat


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Depuneri Multistrat


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Analizele SE# ale filmelor multistrat

Proba 2.6Co/g!/Cu

Proba 2."#C#/g!/Cu


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2 4 6 8 10

0

2

4

6

8

10

12

14

Ta/MgO+Cu+Co

WtCo Randul 1

WtCo Randul 2

WtCo Randul 3

WtCo Randul 4

Wt%

Pozitia probi

Concentratiile masice ale fiecarui material in parte

!o

2 4 6 8 10

4

6

8

10

12

14

Wt%

Pozitia probi

WtCu Randul 1

WtCu Randul 2

WtCu Randul 3

WtCu Randul 4

!u

2 4 6 8 10

2

4

6

8

10

12

Ta/MgO+Cu+Co

Wt%

Poziti prob

WtMg Randul 1

WtMg Randul 2

WtMg Randul 3

WtMg Randul 4

#g$


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Sc%ema contactelor masuratorii in patru puncte


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asuratori electrice efectuate pe probele multistrat

!2" 0 2" "0 #" 100 12"

0$000

0$002

0$004

0$006

0$008

&'(

)&*(

13$03$0,-t1!1,)!',0!200*

!2" 0 2" "0 #" 100 12"

0$000

0$002

0$004

0$006

0$008

&'(

)&*(

13$03$0+,-t1!1,)!',200!0*

0 20 40 60 80 100

!0$002

0$000

0$002

0$004

0$006

0$008

&'(

)&.*(

-t3!3,)!',0!100.*

0 20 40 60 80 100

0$000

0$002

0$004

0$006

0$008

&'(

)&.*(

-t3!3,)!',100!0.*


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asuratori !$% efectuate pe probele multistrat

+,.,2 +,.,1 ,.,, ,.,1 ,.,2

+2

+22

+2,

+1-

+1

+1

+12

+1,

+-

+

+

+2

,

2

MOK"/ignal)%'eg*

0 )T*

-i,2!2

+,.,3 +,.,2 +,.,1 ,.,, ,.,1 ,.,2 ,.,3 ,.,

+12

+1,

+-

+

+

+2

,

2

MOK"/ignal)%'eg*

0 )T*

-i,1!4

+,.,3 +,.,2 +,.,1 ,.,, ,.,1 ,.,2 ,.,3 ,.,

+1,

+

+-

+

+

+

+

+3

+2

+1

,

1

2

MOK"/ignal)%'eg*

0 )T*

-i,1!10

!oncentratie mare de !o !oncentratie mare de !u

!oncentratie mare de #g$


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#asuratori #& pe probele multistrat

!0$06 !0$04 !0$02 0$00 0$02 0$04 0$06 0$08 0$10

0

1

2

3

4

MR%

&T(

MRau )T

Proba 2.&


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#asuratori #& pe probe multistrat

Proba 2.'

!0$4 !0$2 0$0 0$2 0$4 0$6

!20

2

4

6

8

10

12

14

1618

20

22

24

26

28

30

32

34

36

,analog &T(

MR&%(

C

au it o proba2n,C


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$ILM" !4A56LA4" MA!5"TO4"7I/TIV"/


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Magnetic domain distribution in

a Fe-Cu film (B)

Topographic AFM image of a

Fe-Cu film (B)

Microscopie de forta magnetica (MFM):

filme Fe-Cu


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Topographic MFM image

100

nm


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Magnetic domains distribution of a Fe-Cu film


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!0$8 !0$6 !0$4 !0$2 0$0 0$2 0$4 0$6 0$8

!0$60

!0$""

!0$"0

!0$4"

!0$40

!0$3"

!0$30

!0$2"

!0$20

!0$1"

!0$10

!0$0"

0$00

&R4

/R0(!

1&%(

&T(

Cuprob no$ "

d532$" .d

Cu538$" .

non tratdtr.al tratd

MR in !Cu tr.all7 tratd and a dpoitd5 ig abrupt

8ariation5unior. di.nional ditribution o or.d do.ain


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!0$8 !0$6 !0$4 !0$2 0$0 0$2 0$4 0$6 0$8

!0$10

!0$08

!0$06

!0$04

!0$02

0$00

&R4/R

0(!1&%(

&T(

9iCu

prob no$ 6d

9i532$+ .

dCu

538$2 .

non tratd

tr.al tratd

MR in 9i!Cu 6o.poit la7r


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!2000 !1"00 !1000 !"00 0 "00 1000 1"00 2000

!0$6"

!0$60

!0$""

!0$"0

!0$4"

!0$40

!0$3"

!0$30

!0$2"

!0$20

!0$1"

!0$10

!0$0"

0$00

0$0"

prob no$ 11Cu!pr.allo7

non tratd

tratd at 3"00C &60 .in(d

Cu53"$8 .

dpr.allo7

53$" .

&R4/R

0(!1&%(

&(

MR in Cu!pr.allo7

5ILP4P


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*M i.ag o t Co!Cu il.

*M i.ag o t !Cu il.


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Magnetoresistance vs. applied magnetic field:- As deposited (black line)

- Thermally treated (red line)

The decrease of the TMR effect after the thermal treatment is caused by:

-trong o!idation of magnetic grains-"artial percolation


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a) b)

#RT$M images on %o & Mg' granular TMR films:b) As deposited

c) Thermally treated

'bservation: formation of large crystalline magnetic domains during the thermaltreatment


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Filme compozite

acela Material pentruevaporare

*%atod 1 %atod 2

$cran

-ubtrat


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T!A "lasma #$mmetr$


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%ear scar on C-% film AFM of the &ear trac'


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Film characterization


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7525162.1275C-W 5

8020142.0260C-W 4

8515101.9240C-W 3

89.59.5111.6220C-W 2

94.85.281.4200C-W 1

C

(at%)

W

(at%)

Hardness

(GPa)

Thi!ness

("#)

$istane t

W rd

(##)

&a#'e

C!W 1 C!W 2 C!W 3 C!W 4 C!W "

0$3

0$4

0$"

0$6

Co33i6into

33ri6tion

-a.pl na.


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4ho%#ohe'ra structures o& the &il% 8ith &ollo8ing

para%eters9 a : .2221 n%, c : .32n% )A/TM pattern9

+13* correspon'ing to 'ia%on';car#on.

n%

/A"

Paul_Cristian_LUNGU_Filme_nanostructurate_prin_TVA_-_LUNGU_C-1.pdf

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