Circuite logice CMOS (Complementary MOS … · 'df 8 in = 0v = vss, atunci tranzistorul t1 are ugs...

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1 Circuite logice CMOS (Complementary MOS) Circuitele logice cu tranzistoare MOS complementare, în prezent, sunt cele mai fabricate circuite ÷ 15V; Densitate de integrare mare. Circuite VLSI . 1. Inversorul CMOS 1.1. Fig. 1. Inversor CMOS 1 2

Transcript of Circuite logice CMOS (Complementary MOS … · 'df 8 in = 0v = vss, atunci tranzistorul t1 are ugs...

1

Circuite logice CMOS (Complementary MOS)

Circuitele logice cu tranzistoare MOS complementare, în prezent, sunt cele mai fabricate circuiteLQWHJUDWHORJLFHRFXSkQGFFDGLQSLD DDFHVWRUD(OHSUH]LQW RVHULHGHSDUWLFXODULW LFDUHFRQIHU RSHUVRQDOLWDWHDSDUWHvQWUHJLLIDPLOLLDVLJXUkQGFRQWLQXDGH]YROWDUHDDFHVWRUFLUFXLWH

• *DP PDUHSHQWUXWHQVLXQLOHGHDOLPHQWDUHRVLQJXU VXUV ÷ 15V;• ,PXQLWDWHOD]JRPRWHH[FHOHQW • 3XWHUHD FRQVXPDW vQ UHJLP VWDWLF HVWH LQILP ÌQ UHJLP GLQDPLF vQV SXWHUHD

FRQVXPDW FUHúWHDMXQJkQGV ILHFRPSDUDELO FXDFLUFXLWHORUELSRODUH• 9LWH] GHOXFUXGHVWXOGHEXQ WRWXúLPDLPLF GHFkWFLUFXLWHOHELSRODUH• Densitate de integrare mare.

&LUFXLWHOHORJLFH&026VXQWIDEULFDWHvQPDLPXOWHVHULLGXS FXPXUPHD] • FLUFXLWH LQWHJUDWHSHVFDU PLF úLPHGLH IDEULFDWHDWkW vQ VHULD VSHFLILF

&026FkWúLvQVHULD&&FXYDULDQWHOHvPEXQ W LWH+&+& + KLJK YLWH] úL$+&$+& $ DGYDQFHGFDUHFRQ LQHFLUFXLWHSLQFXSLQúLIXQF LHFXIXQF LHHFKLYDOHQW FXVHULD77/

• Circuite VLSI .

1. Inversorul CMOS

1.1. 6FKHPDHOHFWULF úLIXQF LRQDUHDLQYHUVRUXOXL&026

ÌQWHKQRORJLH&026SRDUWD IXQGDPHQWDO HVWHSRDUWD18DF UHLVFKHP HOHFWULF úL VWUXFWXUHVWHSUH]HQWDW vQILJXUD

Fig. 1. Inversor CMOS

&RQVWUXF LH&LUFXLWXOHVWH IRUPDWGLQGRX WUDQ]LVWRDUH026 OHJDWH vQ VHULH XQXO FX FDQDO LQGXV Q 71 úLFHO ODOW FX FDQDO LQGXV WLS S 72 vQVHULDWH&HOH GRX JULOH VXQW OHJDWH vPSUHXQ úL FRQVWLWXLH

2

LQWUDUHDFLUFXLWXOXL&HOHGRX GUHQHOHJDWHvPSUHXQ FRQVWLWXLHLHúLUHDSRU LL6XEVWUDWXOGHWLSSHVWHOHJDWODFHOPDLQHJDWLYSRWHQ LDO LDUFHOGHWLSQODFHOPDLSR]LWLYSRWHQ LDOÌQDFHVWIHOVHUHDOL]HD] EORFDUHD MRQF LXQLL S ± Q VXEVWUDWVXEVWUDW ,GHQWLILFkQG WHQVLXQLOH GH HOHFWURG DOHWUDQ]LVWRDUHORUFXWHQVLXQLOHVSHFLILFHLQYHUVRUXOXLVHREVHUY F

INGS UU1

= , DDIN2GS VUU −= , INGS UU1

= úL DDODS VUU2

−=

&LUFXLWXOVHDOLPHQWHD] ODWHQVLXQHSR]LWLY QRWDW 9DD (valori de 3,5÷9%RUQDGHPDV HVWHQRWDW 9SS&HOHGRX WUDQ]LVWRDUHILLQGvQVHULDWHVXQWSDUFXUVHGHDFHODúLFXUHQW,D1 = ID2 = IDD.&HOHGRX WUDQ]LVWRDUHDXRFRQVWUXF LHVLPHWULF XUP ULQGXVHV DLE WHQVLXQLOHGHSUDJHJDOHvQYDORDUHDEVROXW HYLGHQW8P1!úL8P2 úLGHDVHPHQHDV DLE DFHODúLFRHILFLHQW (JDOLWDWHD FRHILFLHQ LORU 1 2 DYkQG vQYHGHUHGLIHUHQ DGLQWUHPRELOLWDWHD HOHFWURQLORU úL DJROXULORUGHRULPDLPLF GHFkWFHDDHOHFWURQLORUVHUHDOL]HD] GLQGLPHQVLRQDUHDFHORUGRX WUDQ]LVWRDUHPentru circuitele din seria 4000 tranzistoarele au o tensiune de prag de cca. 1,5–2V.Tranzistoarele din seriile VLSI au tensiuni de prag ceva mai mici ( 0,5 V – 1 V ).

)XQF LRQDUH'DF VHDSOLF 8IN = VDD, atunci tranzistorul T1 are pINGS UUU

1>= úLHVWHGHVFKLV LDU72 are

p2GS UV0U2

<= úLHVWHEORFDW/DLHúLUHVHRE LQHVHPQDOORJLFILJ

'DF 8IN = 0V = VSS , atunci tranzistorul T1 are p1INGS U0UU1

<== úLHVWHEORFDW LDU72 are

DDGS VU2

−= úLHVWHGHVFKLV ( )p2GS UU2

> /DLHúLUHVHRE LQHORJLF

&LUFXLWXO UHDOL]HD] IXQF LD ORJLF 18 DYkQG R IXQF LRQDUH FDUH VH SRDWH VLPXOD FX GRXFRPXWDWRDUHIXQF LRQkQGvQFRQWUDWLPS

)LJ)XQF LRQDUHDLQYHUVRUXOXL&026

&DUDFWHULVWLFLOHúLSDUDPHWULLSRU LL&026IXQGDPHQWDOH

1.2.1.Caracteristica de transfer UO = f(UINúLFDUDFWHULVWLFDGHFXUHQW,DD =f(UIN)

6 SUHVXSXQHPF DPEHOHWUDQ]LVWRDUHDXFDUDFWHULVWLFLLGHQWLFHGDUGHVHPQHGLIHULWHúLDFHHDúLtensiune de prag UpGHDSUR[LPDWLY9'HDVHPHQHDV FRQVLGHU PF OD LQWUDUH VH DSOLF R

3

tensiune UINFDUHYDULD] vQLQWHUYDOXO≤ UIN ≤ UDD6HYDFRQVLGHUDF WHQVLXQHDGHDOLPHQWDUHeste mai mare de 4 V.3HQWUXGHGXFHUHDFDUDFWHULVWLFLLGHWUDQVIHUIRORVLPFRPSXQHUHDJUDILF SURLHFWkQGSHSODQXOGHDEVFLV 8OúLRUGRQDW ,DDFDUDFWHULVWLFLOHFHORUGRX WUDQ]LVWRDUHILJ

)LJ&RPSXQHUHDJUDILF SHQWUXFDUDFWHULVWLFLOHGHFXUHQWDOHWUDQ]LVWRDUHORU71úL72

6HREVHUY F SHQWUX71 caracteristicile coincid cu caracteristicile ID = f(DS) ILJXUDWFX OLQLHFRQWLQX vQWLPSFHSHQWUX72 caracteristicile ID = f(UDS) sunt translate cu VDD úLGHVHQVRSXVID DODEVFLVHL72 este cu canal p) ILJXUDWHFXOLQLHvQWUHUXSW &DUDFWHULVWLFLOHDXIRVWUHSUH]HQWDWHSHQWUXGLYHUVHYDORULDOHDFHOXLDúLSDUDPHWUX8IN6HREVHUYF SHQWUX DFHODúL8IN 1 caracteristica pentru T1 HVWH FHDPDL DSURSLDW VGH DEVFLV vQ WLPS FHpentru T2 FRUHVSXQGHODFDUDFWHULVWLFDFHDPDLGHS UWDW GHDEVFLV YH]L OHJ WXUDGLQWUH8IN úLUGSSHQWUXFHOHGRX WUDQ]LVWRDUH3XQFWHOHGH IXQF LRQDUHQRWDWH$%&'(úL)VHDIO ODLQWHUVHF LDFDUDFWHULVWLFLORUFHFRUHVSXQGOD8IN GHDFHODúLLQGLFH .

)LJ&DUDFWHULVWLFDGHWUDQVIHUúLGHFXUHQWSHQWUXLQYHUVRUXO&026

9RPGHRVHELXUP WRDUHOHSXQFWHGHIXQF LRQDUH• Punctul A corespunde la tensiunea de intrare UIN 1 5H]XOW 0U

1GS = úL DDGS VU2

−= .

Caracteristica pentru T1 VH FRQIXQG SUDFWLF FX DEVFLVD úL vQ FRQVHFLQ SXQFWXO $ VHFDUDFWHUL]HD] SULQWHQVLXQHDGHLHúLUH8OH = UDDúLFXUHQWXODEVRUELWGHODVXUV ,DDH = 0. În fig.4

4

punctul A coincide practic cu întregul palier caracterizat de intervalul UIN < UP1 pentru ambelegrafice.ÌQ FRQFOX]LH GLQ SXQFWXO GH IXQF LRQDUH $ VH GHWHUPLQ XUP WRULL SDUDPHWULL DL LQYHUVRUXOXLCMOS:

- UOH = UDD

- IDDH = 0- UIL = 0 … UP

• Punctul B VH FDUDFWHUL]HD] SULQ 8IN 2 > Up1 . Tranzistorul T1 VH GHVFKLGH úL OXFUHD] vQUHJLXQHDVDWXUDW SRU LXQHDRUL]RQWDO DFDUDFWHULVWLFLL VDOHGHFXUHQWLDU72 OXFUHD] vQ UHJLXQHDOLQLDU SRU LXQHDURWXQMLW DFDUDFWHULVWLFLLVDOH&XUHQ LLSULQFHOHGRX WUDQ]LVWRDUHVXQWFDOFXOD LFXUHOD LLOHVSHFLILFHFHORUGRX UHJLXQL

( ) ( )22

2

1

211

11

PINPGSD

UUUUI

−=

−= ββ

( ) ( )( ) ( )

−−−−−=

−−=

22

2

22

22

22222DDO

DDOpDDINDS

DSpGSD

VUVUUVU

UUUUI ββ

Egalând ID1 = ID2VHGHWHUPLQ 8O =f (UIN6HRE LQHRHFXD LHGHRUGLQDWkWvQ8OFkWúLvQ8IN

FDUDFWHULVWLFDGH WUDQVIHUDYkQG DOXUDGHSDUDERO FXYkUIXO vQVXV ILJSRU LXQHD$%&6HREVHUY F vQDFHDVW UHJLXQHFXUHQWXO DEVRUELW GH OD VXUV FUHúWHSHP VXU FHQHGHSODV PGLQpunctul A spre punctul C. Punctul C este punctul terminal al acestei regiuni, în care T2 trece dinUHJLXQHDOLQLDU vQFHDGHVDWXUD LH• Punctele de la C la D: Crescând în continuare UINSXQFWXOGHIXQF LRQDUHVHGHSODVHD] GLQC spre D în care ambele tranzistoare, T1 úL 72 VXQW vQ UHJLXQHD VDWXUDW 3UDFWLF vQ DFHDVWSRU LXQH FHOHGRX FDUDFWHULVWLFL VH VXSUDSXQ DPEHOH VXQWRUL]RQWDOH úL SXQFWXO GH IXQF LRQDUHPLJUHD] GLQ&vQ'I U DPRGLILFDWHQVLXQHDGHLQWUDUH'DF FHOHGRX WUDQ]LVWRDUHVXQWSHUIHFWVLPHWULF DFHODúL 8P úL DFHODúL DFHDVW VLWXD LH VH vQWkPSO SHQWUX 8IN 3 = VDD ÌQ DFHDVWUHJLXQH VH FDOFXOHD] FXUHQWXOPD[LPDEVRUELW GH OD VXUV LQkQGFRQW F 72 este în regiunea deVDWXUD LH

( ) ( ) ( )8

2

2

2/

2

221

1

211

11maxPDDPDDPGS

DDD

UVUVUUII

−=

−=

−== βββ (1)

• Punctul E : Crescând UIN peste valoarea VDD /2 tranzistorul T1WUHFHvQUHJLXQHDOLQLDU LDU72

vQ UHJLXQHDGHVDWXUD LH&XUHQ LLSULQ FHOHGRX WUDQ]LVWRDUHSRW IL FDOFXOD L FX UHOD LLOH VSHFLILFHFHORUGRX UHJLXQLúLGLQHJDOLWDWHD,D1 = ID2 se poate determina determina UO =f (UIN6HRE LQHRHFXD LHGHRUGLQDWkWvQ8OFkWúL vQ8IN FDUDFWHULVWLFDGHWUDQVIHUDYkQGDOXUDGHSDUDERO FXYkUIXO vQ MRV ILJ SRU LXQHD'()6HREVHUY F vQ DFHDVW UHJLXQH FXUHQWXO DEVRUELW GH ODVXUV VFDGHSHP VXU FHQHGHSODV PGLQSXQFWXO'VSUHSXQFWXO)Punctul F corespunde la tensiunea de intrare UIN 5 = VDD 5H]XOW DDGS VU

1= úL 0U

2GS = .

Caracteristica pentru T2VHFRQIXQG SUDFWLFFXDEVFLVDúLvQFRQVHFLQ SXQFWXO)GHLQWHUVHF LHVHDIO SHDEVFLV VHFRQIXQG FXRULJLQHDvQILJúLVHFDUDFWHUL]HD] SULQWHQVLXQHDGHLHúLUH8OL

= 0 = VSSúLFXUHQWXODEVRUELWGHODVXUV GHYDORDUH,DDL ÌQILJúLILJSXQFWXO)FRLQFLGHde fapt cu întregul palier caracterizat de intervalul VDD - UP < UIN < VDD SHQWUX F vQ vQWUHJ

5

acest interval T2HVWHEORFDWúLFDUDFWHULVWLFDVDVHFRQIXQG FXDEVFLVDVHREVHUY F 9DD – UP

este de fapt egal cu VDD + UP2 deoarece T2 fiind cu canl tip p are UP2úLVDIRORVLWQRWD LD8P =UP1 = |UP2| ).ÌQ FRQFOX]LH DQDOL]kQG SXQFWXO GH IXQF LRQDUH ) VH GHWHUPLQ XUP WRULL SDUDPHWULL DLinversorului CMOS:

- UOL = VSS =0- IDDL = 0- UIH = VDD – UP .......VDD

ÌQFRQFOX]LHLQYHUVRUXO&026SUH]LQW XUP WRDUHOHavantajeFRPSDUDWLYFXRULFDUHDOW IDPLOLHGHcircuite logice:

- &DUDFWHULVWLF GHWUDQVIHUDSURDSHLGHDO FDUDFWHUL]DW GH1. SRU LXQHD&±'YHUWLFDO VLWXDW OD8IN = VDD/2;2. QLYHOHORJLFHODLHúLUHLGHDOH8OH = UDD úL8OL = 0;3. SRU LXQLOH$úL)GHSHFDUDFWHULVWLFDGHWUDQVIHUVXQWRUL]RQWDOH

- Consum nulGHODVXUV SHQWUXVLWXD LLOH8OHúL8OL ;

2EVHUYD LH

'DF WHQVLXQHDGHDOLPHQWDUHHVWHH[DFW9DD = 2 UPDWXQFLUHJLXQLOH$%&úLUHVSHFWLY'()GH FRQGXF LH VLPXOWDQ SHQWUX FHOH GRX WUDQ]LVWRDUH GLVSDU &DUDFWHULVWLFD GH WUDQVIHU GHYLQHSHUIHFW GUHSWXQJKLXODU úL SUDFWLF FRQVXPXO GH OD VXUV HVWH QXO SHQWUX vQWUHJ LQWHUYDOXOtensiunilor de intrare 0< UIN <VDD.

3XWHUHDFRQVXPDWDeosebim :

- SXWHUHFRQVXPDW vQUHJLPVWDWLF- SXWHUHFRQVXPDW vQUHJLPGLQDPLF

3XWHUHDFRQVXPDW vQUHJLPVWDWLFGHSRDUWD&026HVWHSUDFWLFQXO GHRDUHFHDWkWSHQWUXQLYHOUOH OD LHúLUH FkW úL SHQWUXQLYHO8OL FXUHQWXO DEVRUELW GH OD VXUV ILJ HVWH H[WUHP GHPLFDYkQGRYDORDUHWLSLF GH,DD≅0,01µA.

3XWHUHDFRQVXPDW GLQDPLFDUHvQYHGHUHGRX FRPSRQHQWH

1. 3XWHUHFRQVXPDW GDWRULW VDUFLQLLFDSDFLWLYH/DEDVFXODUHDLHúLULLGLQ8OL în UOHVDUFLQDFDSDFLWLY &VHvQFDUF úLDFXPXOHD] FDQWLWDWHDGH

energie 2

CV 2DD SUHVXSXQkQGF vQXQLWDWHDGHWLPSDXORFII IUHFYHQ DFRPXW UL vQVHDPQD

F SXWHUHDGLVLSDW SHDFHDVW FDOHHVWH2

CVfP

2DD

1din = .

2. 3XWHUHFRQVXPDW GDWRULW FRQGXF LHLVLPXOWDQHDFHORUGRX WUDQ]LVWRDUHAtât timp cât tensiunea de intrare UINHVWHFXSULQV vQLQWHUYDOXO8p ≤ UIN ≤ UDD-UpFHOHGRXWUDQ]LVWRDUH FRQGXF VLPXOWDQ úL SHQWUX GHWHUPLQDUHD DFHVWHL FRPSRQHQWH D SXWHULL GLQDPLFHGLVLSDWHVHIRORVHúWHGLDJUDPDGLQILJ

6

(QHUJLDFRQVXPDW vQWURSHULRDG HVWHE=UDD⋅IDD med⋅τ unde s-a notat

IDD med = IDDmax/2 iar IDDmax HVWH GDW GH úL

( )frDD

pDDtt

V

UV+⋅

−=

2τ HVWH WLPSXO GH FRQGXF LH

VLPXOWDQ DOFHORUGRX WUDQ]LVWRDUH&RQVLGHUkQG I SHULRDGH GH FRPXWDUH vQWUR VHFXQG SXWHUHDFRQVXPDW YDIL

( ) ( ) ftt

UV

UVP fr

pDD

pDDdin ⋅+⋅

⋅−=4

22

2

2 β Fig.

,QWHUYDOXOGHFRQGXF LHVLPXOWDQ

6HGHWHUPLQ GHFL

( ) ( ) fttUVP frpDDdin ⋅+⋅−= 32 2

16

β

unde tr úL Wf VXQW GXUDWHOH IURQWXULOH GH FUHúWHUH úL UHVSHFWLY GHVFUHúWHUH DOH LPSXOVXULORU GH ODintrare.

2EVHUYD LH&HDGHDGRXDFRPSRQHQW DSXWHULLGLVLSDWHGLQDPLFQXGHSLQGHGHFDSDFLWDWHD&FDUH vQFDUF FLUFXLWXO ÌQ UHDOLWDWH DFHDVWD FDSDFLWDWH SDUD]LW P UHúWH GXUDWD IURQWXULORU GH ODLHúLUHDFLUFXLWXOXLFHHDFHGXFH ODFUHúWHUHDSXWHULLGLVLSDWH ODFLUFXLWHOHFDUHXUPHD] GXScircuitul luat în calcul de noi.

3HQWUX IUHFYHQ HPDLPDULGH0+]SXWHUHDGLQDPLF FRQVXPDW GHRSRDUW &026 SHQWUXUDD=9DMXQJHV GHS úHDVF P:ILLQGFRPSDUDELO FXRSRDUW 77/VWDQGDUG

1.2.3. Nivele logice, imunitate de zgomot, margine de zgomot

1LYHOHOHORJLFHODLHúLUHDSRU LL&026DXIRVWGHILQLWHODWUDVDUHDFDUDFWHULVWLFLLGHWUDQVIHUúLVXQWVOL=0 V (indiferent de alimentarea VDD) iar VOH=VDD.

'DF OD LQWUDUHVHDSOLF 8IN=0 sau UIN=UDD DWXQFL QLYHOHOH ORJLFHGH OD LHúLUH VXQW VLJXU FHOHDPLQWLWHDQWHULRUÌQSOXVID GHDFHVWHFRQVLGHUD LLVWULFWSXQFWXDOHSHQWUXQLYHOHOHDFFHSWDWHODLQWUDUHVHUHFRPDQG XUP WRDUHOHLQWHUYDOH -VIL ±7HQVLXQHDODLQWUDUHJDUDQWDW SHQWUXQLYHO/FDUHQXGXFHODPRGLILFDUHDQLYHOXOXLGHODLHúLUH6HJDUDQWHD] YDORDUHDPD[LP DQLYHOXOXL/ODLQWUDUHFDILLQG9IL max=0,3·VDD;-VIH ±7HQVLXQHD OD LQWUDUHJDUDQWDW SHQWUXQLYHO+FDUHQXGXFH ODPRGLILFDUHDQLYHOXOXLGHLHúLHUH6HJDUDQWHD] YDORDUHDPLQLP SHQWUXQLYHOXO+ODLQWUDUHFDILLQG9IH min=0,7·VDD

6HJDUDQWHD] vQDFHVWIHOo margine de zgomot de:

DDILOLNIL VVVV ⋅≅−= 3,0max (NIL-noise immunity low level)

7

DDIHOHNIH VVVV ⋅≅−= 3,0min (NIH – noise immunity high level)

Exemplu numeric :

Pentru VDD 9VHRE LQH9NIL=1,5V=VNIH

Pentru VDD 9VHRE LQH9NIL=3V=VNIH

Pentru VDD 9VHRE LQH9NIL=4,5V=VNIH

*UDILFPDUJLQHDGH]JRPRWJDUDQWDW DUDW FDvQILJ

Fig. 6. Marginea de zgomot CMOS

8QHOHILUPH1DWLRQDO6HPLFRQGXFWRUJDUDQWHD] RPDUJLQHGH]JRPRWGH9vQVHQVXOXUP WRUSHQWUXFD LHúLUHDV ILH vQ OLPLWHOHDÂ9DDID GHQLYHOHOH9OL úL9OH definite, se permite caLQWUDUHDV ILHvQOLPLWHOHDÂ9DD9ID GH9VDX9D.

Imunitatea la zgomot D FLUFXLWHORU ORJLFH&026 HVWH IRDUWH EXQ GH FFD Â9DD. AceastavQVHDPQ F VHPQDOHOHSDUD]LWHFDUHGLIHU FXSkQ ODÂ9DDID GHQLYHOHOH9OL sau VOH, nuVHYRUSURSDJDSULQVLVWHPFDXQQLYHO ORJLFHURQDW%LQHvQ HOHVF GXS SULPDSRDUW SULQFDUHWUHFHVHPQDOXOSDUD]LWYDDS UHDGDUFXRDPSOLWXGLQHPDLPLF 3HP VXU FHVHSURSDJ SULQVLVWHPVHPQDOXOYDILDWHQXDWGHILHFDUHFLUFXLWSULQFDUHWUHFHSkQ FH vQ ILQDOYDGLVS UHD'Hexemplu, pentru un circuit basculant bistabil tipic, un semnal de zgomot de maxim 0,45·VDD pelinia de tact nu va cauza bascularea circuitului.

,HúLULEXIHUDWHÌQ YHGHUHD vPEXQ W LULL FDUDFWHULVWLFLL GH WUDQVIHU R VHULH GH FLUFXLWHUHDOL]DWHvQWHKQLF &026±ELVWDELOHPRQRVWDELOHUHJLVWUHQXP U WRDUH±SUH]LQW OD LHúLUHGRX FLUFXLWH18 vQVHULDWH ILJ $VWIHO GH LHúLUL SRDUWQXPHOHGHLHúLULEXIHUDWHEXIIHUHGRXWSXWV'LQSXQFWGHYHGHUHORJLFFHOHGRX LQYHUVRDUH UHSUH]LQW R LGHQWLWDWH $FHDVW VROX LH UHDOL]HD]vPEXQ W LUHD FDUDFWHULVWLFLL GH WUDQVIHU FUHúWHUHD LPXQLW LL OD ]JRPRW úLVF GHUHD LPSHGDQ HL GH LHúLUH D FLUFXLWXOXL al doilea inversor areJHRPHWULH P ULW FHHD FH DVLJXU XQ FRHILFLHQW P ULW úL LPSOLFLW RUH]LVWHQ GHLHúLUH)LJ ,HúLULEXIHUDWH PDLPLF

&XUHQWGHLQWUDUHúLLHúLUHSHQWUXLQYHUVRUXO&026

6FKHPDHFKLYDOHQW DXQXLFLUFXLWGHLQWUDUHDOXQHLSRU L&026HVWHFRQVWLWXLW GLQWURUH]LVWHQfoarte mare 1012ΩvQSDUDOHOFXRFDSDFLWDWHGHS)3UDFWLFLPSHGDQ DGHLQWUDUHVHFRQVLGHU Dfi SXUFDSDFLWLY ÌQFRQVHFLQ FXUHQWXOVWDWLFGHLQWUDUHvQSRDUW HVWHIRDUWHPLF

IIH=-10-5µAIIL=+10-5µA

8

FRQYHQ LDGHVHPQHHVWH″+″FXUHQWXOFDUHLQWU úL″-″FXUHQWXOFDUHLHVHGLQSRDUW

ÌQ FHHD FH SULYHúWH FDUDFWHULVWLFLOH GH LHúLUH DFHVWHD FRLQFLG FX FDUDFWHULVWLFLOH ,D=f(UDS) aletranzistorului care este deschis T1 sau T2 LQkQGFRQWGHOHJ WXUDvQWUH80, VDS, IDúL,0.

)LJ&XUHQWGHLHúLUHSHQWUXQLYHO/ODLHúLUHúLSHQWUXQLYHO+

$VWIHOSHQWUXQLYHO/ OD LHúLUHHVWHGHVFKLVWUDQ]LVWRUXO71ÌQDFHVWFD]VHGHWHUPLQ 80=UDS1;UGS1=UINúL,0=ID.&RQVLGHUkQG SRDUWD FRPDQGDW GH R DOWD VLPLODU UH]XOW F 8IN=UDD (T1 deschis) deciFDUDFWHULVWLFLOHGLIHU vQIXQF LHGHWHQVLXQLOHGHDOLPHQWDUH9DD.

9DORULOHJDUDQWDWHSHQWUXDFHDVW VLWXD LHSHQWUXFLUFXLWHGLQVHULDVXQWI0L = 1mA pentru VDD=9úL80=0,4VI0L = 2,6mA pentru VDD=9úL80=0,5VI0L = 6,8mA pentru VDD=9úL80=1,5V

3HQWUX QLYHO + OD LHúLUH 72 HVWH GHVFKLV úL FDUDFWHULVWLFLOH DUDW FD vQ ILJ E LDU YDORULOHJDUDQWDWHVHULDDOHFXUHQ LORUVXQWI0H = -1mA pentru VDD=9úL80=4,6VI0H = -2,6mA pentru VDD=9úL80=9,5VI0H = -6,8mA pentru VDD=9úL80=13,5V

2EVHUYD LH 6DX LQGLFDW YDORULOH WLSLFH DOH FXUHQ LORU SHQWUX FLUFXLWHOH SURGXVH OD0LFURHOHFWURQLFD &LUFXLWHOH SURGXVH GH DOWH ILUPH DX LQGLFDWH DOWH YDORUL SHQWUX FXUHQ L vQ

general mai mici).

1.2.5. Caracteristici dinamice

Pentru un inversor se definesc fig 9.

9

-tpLH±WLPSGHSURSDJDUHODYDULD LDLHúLULLGLQ/vQ+-tpHL±WLPSGHSURSDJDUHODYDULD LDLHúLULLGLQ+vQ/-tTLH±WLPSXOGHWUDQ]L LHGLQ/vQ+6HP VRDU vQWUHYDORULOHGHúLGLQ9DD;-tTHLWLPSXOGHWUDQ]L LHGLQ+vQ/

Fig. 9. Parametrii dinamici ai unui inversor

9DORULOH WLSLFH SHQWUX DFHúWL WLPSLpentru un circuit din seria 4000 vQ FRQGL LLOH vQ FDUH ODLQWUDUHVHDSOLF XQVHPQDO8IN cu trise=tfall=QVúLVDUFLQDHVWH&L=50pF, RL=200KΩ, sunt:tpLH=tpHL= 125ns pentru VDD= 5V;

60ns pentru VDD=10V; 45ns pentru VDD=15V;

tTLH=tTHL= 100ns pentru VDD= 5V; 50ns pentru VDD=10V; 40ns pentru VDD=15V.

6HIDFHREVHUYD LDF vQFD]XOXQHLVDUFLQLFDSDFLWLYHFDUHvQFDUF XQFLUFXLW&026LPHGLDWGXSFRPXWDUHWHQVLXQHDGH LHúLUHYDULD] vQUDPS OLQLDUGDWRULW FRPSRUW ULL WUDQ]LVWRUXOXL026ca o VXUV GHFXUHQWFRQVWDQW$ELDFkQGWHQVLXQHDGHLHúLUHVHDSURSLHGHYDORDUHDILQDO 9DD

VDX PDV FXUED WHQVLXQLL GH LHúLUH VH URWXQMHúWH GHRDUHFH WUDQ]LVWRUXO 026 LQWU vQ UHJLXQHDOLQLDU FXUHQWXOV XGHGUHQ VF ]kQG'DWRULW DFHVWHL FRPSRUW UL D WUDQ]LVWRUXOXL 026 FD R VXUV GH FXUHQW FLUFXLWHOH &026 VXQWIRDUWH VHQVLELOH OD FUHúWHUHD VDUFLQLL FDSDFLWLYH ± vQ VHQVXO F DFHVWD GHWHUPLQ FUHúWHUHDDFFHQWXDW SURSRU LRQDOFX&LDWLPSLORUGHWUDQ]L LHúLGHFLVF GHUHDYLWH]HL'LQDFHDVW FDX]fan-out-ul circuitelor CMOS aparent infinit (curent de intrare nul) este drastic limitat (cca 25)GDWRULW FDSDFLW LORU GH LQWUDUH FDUH LQWHUYLQ vQ SDUDOHO úL GHWHUPLQ WLPSL GH WUDQ]L LHinacceptabili de mari.

3HGHDOW SDUWHRGDW FXFUHúWHUHDWHQVLXQLLGHDOLPHQWDUH9DDFUHúWHúLWHQVLXQHDGHLQWUDUH8IN

FHHD FH GXFH OD FUHúWHUHD ( )DDGSIN VUU == FXUHQWXOXL GH GUHQ DO WUDQ]LVWRDUHORU 026

YDULD] SURSRU LRQDO FX 2DDV úL GHFL OD VF GHUHD WLPSLORU GH SURSDJDUH úL WUDQ]L LH SULQ

vQF UFDUHDPDLUDSLG DFDSDFLW LORUGHVDUFLQ ÌQFRQFOX]LHSHQWUXXQPRQWDMGDWDYkQGFDSDFLW LOHGHVDUFLQ IL[DWHSULQFUHúWHUHDWHQVLXQLLde alimentare va FUHúWHYLWH]DVLVWHPXOXLGDUúLSXWHUHDGLVLSDW

,QWHUID DUHDFLUFXLWHORU&026FXDOWHFLUFXLWHORJLFH

10

$WXQFLFkQGVHIDFHLQWHUID DUHDvQWUHGLIHULWHWLSXULGHFLUFXLWHORJLFHSUREOHPDFDUHVHSXQHHVWHde a asigura compatibilitatea tensiunilor úLFRPSDWLELOLWDWHD FXUHQ LORU DVLJXUD L OD LHúLUHGHSRDUWDFDUHFRPDQG FXFHLFHUX LODLQWUDUHGHSRDUWDFRPDQGDW ÌQFHOHFHXUPHD] YRPDQDOL]DLQWHUID DUHDGLQWUHFLUFXLWHOH&026úLFHOH77/

D&LUFXLW77/FRPDQG XQFLUFXLW&026ÌQ SULPXO UkQG VH FRQVLGHU HYLGHQW FLUFXLWXO &026 DOLPHQWDW OD WHQVLXQH GH 9DD=5V deDFHHDúLYDORDUHFXDOLPHQWDUHD9CC a circuitelor TTL..&XUHQ LLGHLQWUDUHODFLUFXLWXO&026ILLQGIRDUWHPLFLQXH[LVW SUREOHPHvQDFHVWVHQV

)LJ,QWHUID D77/±&026

ÌQFHHD FH SULYHúWH QLYHOHOH GH WHQVLXQH ILJ VHREVHUY F vQ FD]XO QLYHOXOXL / QX H[LVWSUREOHPHÌQVFKLPEvQFD]XOQLYHOXOXL+GDF VHLDYDORDUHDDVLJXUDW GHFDWDORJSHQWUXLHúLUHDTTL de VOH≥2,4V, aceasta nu satisface intrarea unui circuit CMOS alimentat la 5 V.ÌQ UHDOLWDWH vQV DYkQG vQ YHGHUH FXUHQWXO IRDUWH PLF GHELWDW GH LHúLUHD 77/ F WUH LQWUDUHDCMOS, nivelul VOHYDILGH±9LHúLUH77/vQJROVXILFLHQWSHQWUXFRPDQGDODOLPLWSHQWUXRLQWUDUH&0263HQWUXRULFHHYHQWXDOLWDWHVHUHFRPDQG XWLOL]DUHDXQUH]LVWRU5″pull-up-rezistor″F WUHVXUVD9DD.ÌQGLPHQVLRQDUHDDFHVWXLDVHDUHvQYHGHUHF DWXQFLFkQGFLUFXLWXO77/HVWHFXORJLFODLHúLUHV

QX VHGHS úHDVF FXUHQWXO GH P$ Ω≅−

≥ KI

VVR

TTL

OLDD 3,001

6H UHFRPDQG FD FLUFXLWXO 77/

XWLOL]DWSHQWUXRDVWIHOGH OHJ WXU V ILHXWLOL]DWnumaiSHQWUXFRPDQGDSRU LORU&026±QXúLalte tipuri (fie ele TTL).

În cazul circuitelor CMOS alimentate la tensiun mai mare (de exemplu VDD 9VROX LDGHLQWHUID DUHSURSXQHXWLOL]DUHDXQXLFLUFWXLW77/ÄRSHQFROOHFWRU´ILJ

E&LUFXLW&026FRPDQG LQWUDUH77/3HQWUX VLWXD LD vQ FDUH LHúLUHD FLUFXLWXOXL &026 HVWH ORJLF DWkW QLYHOXO GH WHQVLXQH FkW úLYDORDUHDúLVHQVXOFXUHQWXOXLFRUHVSXQGFXFHOHQHFHVDUHODLQWUDUHD77/úLDQXPH,HúLUH&026 : 1mA pentru VOH≥4,6VIntrare TTL : 40µ$úL9IH≥2V

11

3HQWUX VLWXD LD ORJLF vQV VH FRQVWDW F R LHúLUH&026 P$SHQWUX9OL≤0,4V ) nu poateFRQGXFHGHFkWGRX LQWU UL77/GH MRDV SXWHUHVDXR LQWUDUH77/6FKRWWN\GH MRDV SXWHUH2SRDUW &026QXSRDWHFRQGXFHRLQWUDUH77/VWDQGDUGFDUHQHFHVLW ,IL=1,6mA.ÌQOHJ WXU FXDFHDVW GLQXUP REVHUYD LHVHIDFXQHOHSUHFL] UL

LHúLUHD&026 DVLJXU P$SHQWUX9OL=9 DFROR XQGH WUDQ]LVWRUXO026 OXFUHD] vQUHJLXQHD OLQLDU ÌQUHJLXQHDGHVDWXUD LH WUDQ]LVWRUXOSRDWHDVLJXUDFFD÷1,3mA, deci în niciun caz 1,6mA;

-valoarea IIL=P$ SHQWUX LQWUDUHD 77/ HVWH FHD DVLJXUDW GH FDWDORJ vQ UHDOLWDWHDSUDFWLF ODLQWUDUHD77/HVWHQHFHVDUXQFXUHQWPDLPLFGHFFDP$5H]XOW GHFLF SRDUWD&026DUILH[DFWODOLPLWDGHDFRPDQGDRLQWUDUH77/VWDQGDUG6ROX LLOHFDUHVHUHFRPDQG VXQW

- IRORVLUHDXQHLSRU L&026VSHFLDO ±EXIIHU±GLQVHULDILHvQYDULDQWDLQYHUWRDUH±±ILHQHLQYHUWRDUH±$FHVWHDSRWFRPDQGDGRX LQWU UL77/VWDQGDUGÌQplus, pot admite tensiuni de intrare mai mare de +VDD, putând face trecere de la circuiteCMOS alimentate la o tensiune mai mare la circuite TTL alimentate la 5V.

- IRORVLUHDDGRX SRU LOHJDWHvQSDUDOHOúLLQWUDUHúLLHúLUH- OHJDUHDvQSDUDOHODLQWU ULORUXQHLSRU L6$818&026ÌQDPEHOHFD]XULVHDVLJXU SXQHUHDvQSDUDOHODGRX WUDQ]LVWRDUH026FDUHvPSUHXQ SRW

comanda o intrare TTL.

1.4. &LUFXLWHSHQWUXSURWHMDUHDLQWU ULORU

$úDFXPVDPDLDPLQWLW LPSHGDQ DGH LQWUDUHDXQXLFLUFXLW&026VHSUH]LQW FDRUH]LVWHQextrem de mare 1012ΩvQSDUDOHOFXRFDSDFLWDWHPLF GHS)3UDFWLFVHFRQVLGHU F LPSHGDQ DGHLQWUDUH&026HVWHSXUFDSDFLWLY $FHDVW FDSDFLWDWH ILLQG IRDUWHPLF HVWHVXILFLHQW RVDUFLQ HOHFWULF PLF SHQWUX D VHRE LQHWHQVLXQLHOHFWULFHPDUL4 &Â8ODERUQHOHFDSDFLW LL2DVWIHOGHFDQWLWDWHGHVDUFLQ HOHFWULFSRDWHILIXUQL]DW GHRVXUV GHHQHUJLHHVWUHPGHVODE FXPDUILGHH[HPSOXVLPSODIUHFDUHFXDHUXO 7HQVLXQHD PDUH OD FDUH VH vQFDUF DFHDVW FDSDFLWDWH SRDWH VWU SXQJH VWUDWXO GH R[LGdeterminând distrugerea circuitului. Se face obseUYD LDF VWUDWXOGHR[LGUH]LVW ODRWHQVLXQHGH9 úL R VLQJXU VWU SXQJHUH D VWUDWXOXL L]RODWRU HVWH VXILFLHQW SHQWUX GLVWUXJHUHD VD ÌQDFHVWHFRQGL LLVHFRQVWDW F S VWUDUHDPDQLSXODUHDúLXWLOL]DUHDFLUFXLWHORU&026DUILH[WUHPGHGHOLFDW SXWkQGGXFHIRDUWHXúRUODGLVWUXJHUHDORU

ÌQ VFRSXO SURWHM ULL FLUFXLWHORU &026 WRDWH LQWU ULOH DFHVWRU FLUFXLWH FDUH VXQW VFRDVH YOD XQSLFLRU DO LQWHJUDWXOXL VXQW SURWHMDWH SHQWUX SRU LOH LQWHUQH DOH FLUFXLWXOXL VH LDX P VXUL GHSUHFDX LHVSHFLDOHvQWLPSXOIDEULF ULLDFHVWRUDúLDSRLRGDW FHLQWU ULOHDXIRVWFRQHFWDWHODLHúLULFRQIRUPVFKHPHLORJLFHSHULFROXOGLVWUXJHULLSULQVWU SXQJHUHGLVSDUH

ÌQILJHVWHSUH]HQWDWFLUFXLWXOGHSURWHF LHVSHFLILFXQHLLQWU UL&026ÌQOHJ WXU FXDFHDVW VFKHP VHIDFXUP WRDUHOHREVHUYD LL

- grila lui T1 DFRSHU VXUVD OXL71, substratul p- úL SDU LDO GUHQD OXL71 DSDU FDSDFLW LSDUD]LWH vQWUH JULO úL ILHFDUH GLQ DFHVWH UHJLXQL 6LPLODU JULOD OXL 72 DFRSHU VXUVD OXL 72,substratul n- úL GUHQD OXL 72 ÌQ FRQVHFLQ FDSDFLWDWHD GH LQWUDUH DSDUH FD ILLQG GLVWULEXLW VXEIRUPDFDSDFLW LORU&1 , C2úL&3ILJXUDWHSXQFWDWvQ ILJ6WU SXQJHUHDRULF UHLDGLQWUHDFHVWHFDSDFLW LHVWHGLVWUXFWLY

12

)LJ&LUFXLWGHSURWHF LHSHQWUXLQWU UL&026

&LUFXLWXOGHSURWHF LHSURSULX]LVFRQVW vQGLRGHOH'1, D2, D3úLUH]LVWHQ D5vQYDORDUHGH 'LRGHOHGLQFLUFXLWXOGHSURWHF LHDXWHQVLXQHDGHGHVFKLGHUHGLUHFW GHFFD9LDU ODSRODUL]DUHLQYHUV WHQVLXQHDvQ]RQD=HQQHUGHFFD95H]LVWHQ D 5 DF LRQHD] FD R UH]LVWHQ GH OLPLWDUH D FXUHQ LORU SULQ GLRGHOH GH LQWUDUHprotejându-le pe acestea.

Diodele D4, D5úL'6VXQWLQWULQVHFLFLUFXLWXOXL&026úLDQXPHD4HVWHMRQF LXQHDSQGLQWUHVXEVWUDWXOGHWLSSúLGUHQDOXL71 care este de tip semiconductor n;D5HVWHMRQF LXQHDSQGLQWUHGUHQDOXL72FDUHHVWHVLOLFLXGHWLSSúLVXEVWUDWXOQ-;D6HVWHMRQF LXQHDSQGLQWUHVXEVWUDWXOWLSS-úLVXEVWUDWXOGHWLSQ-.Tensiunea Zenner pe diodele intriseci este : pentru D4úL'5 9LDUSHQWUX'6 9

&LUFXLWXO GHSURWHF LH DVLJXU SURWHMDUHD FRQWUD vQF UF ULL OD WHQVLXQLSHULFXORDVHSHQWUXRULFDUHGLQWUHFDSDFLW LOH&1, C2 sau C3ILJXUDWHLQGLIHUHQWGHSRODULWDWHDFXFDUHDUWLQGHV VHvQFDUFH

Astfel C1 este în paralel cu dioda D2úLQXVHSRDWHvQF UFDGHFkWODPD[LP9FXRSRODULWDWHVDX9FXFHDODOW SRODULWDWH/DWHQVLXQLPDLPDULVHGHVFKLGHGLRGD$FHVWHWHQVLXQLQXSURGXFdistrugerea circuitului.

Similar, C3 fiind în paralel cu D3QXVHvQFDUF QLFLHOODWHQVLXQLSHULFXORDVH'DF OX P vQ FRQVLGHUDUH &2 REVHUY P F DFHDVWD HVWH vQ SDUDOHO FX '5 SRODUL]DW GLUHFWvQVHULDW FX '2 SRODUL]DW LQYHUV VDX FX '4 SRODUL]DW GLUHFW vQVHULDW FX '3 SRODUL]DWLQYHUVÌQFRQVHFLQ &2VHSRDWHvQF UFDODPD[LP8Z9DGLF ODPD[LP9LQGLIHUHQWGHSRODULWDWHWHQVLXQHFDUHHVWHQHGLVWUXFWLY

2EVHUYD LH LQkQGFRQWGHPRGXOGHUHDOL]DUHDUH]LVWHQ HLGHLQWUDUH5VHREVHUY F FHOHGRXdiode D1úL'2VXQWGHIDSWMRQF LXQHDSQGLQWUHFRUSXOUH]LVWHQ HLúLVXEVWUDWXOQYH]LILJ

13

Fig. 12. Realizarea diodelor D1úL'2SUHFXPúLDUH]LVWHQ HL5

&KLDUGDF LQWU ULOHFLUFXLWXOXL&026VXQWSURWHMDWHODXWLOL]DUHDDFHVWRUDVHYRUDYHDvQYHGHUHRVHULHGHSUHFDX LL

a).TensLXQHDGHLQWUDUHV YDULH]HvQGRPHQLXO≤ UIN ≤ VDD (evident când sursa de semnalHVWHDOWFLUFXLWGHFkWRSRDUW &026vQFD]FRQWUDUSRWILGLVWUXVHFKLDUGLRGHOHGHODLQWUDUH

b). Sursa de alimentare VDDQXWUHEXLHRSULW vQWLPSFHVHDSOLF VHPQDOGHODXQJHQHUDWRUexternFX LPSHGDQ GH LHúLUHPLF OD LQWUDUHDFLUFXLWXOXL&026'DF 9DD HVWHRSULW DWXQFLsemnalul de la generator poate distruge diodele de la intrare.

F ÌQPDQLSXODUH FLUFXLWHOH&026 WUHEXLH V ILH DPEDODWH vQ VXSRU L PHWDOici, eventualreglete speciale ″Antistat″.

G6FXOHOHPHWDOLFHFXFDUHVH OXFUHD] DSDUDWHOHHOHFWULFHFLRFDQHOHGH OLSLWHWFWUHEXLHV ILHOHJDWHODS PkQW

e). ,QWU ULOH QHXWLOL]DWH QX VH YRU O VD vQ DHU DWkWGDWRULW VHPQDOHORU SDUD]LWH ILH HOHFKLDUGHHQHUJLHPLF FkWúLGDWRULW SRVLELOLW LLGLVWUXJHULL$FHVWHDYRUILOHJDWHILHODPDV ILHla +VDD, GXS FXP SHUPLWH IXQF LD ORJLF 1X VH UHFRPDQG OHJDUHD LQWU ULORU QHXWLOL]DWHvPSUHXQ FX DOWH LQWU UL FKLDU GDF IXQF LD ORJLF DU SHUPLWH GHRDUHFH DFHDVWD DU GXFH ODFUHúWHUHDFDSDFLW LLGHLQWUDUH

3RU L&026

2.1. Poarta de transmisie CMOS

3RDUWDGHWUDQVPLVLHUHDOL]DW vQWHKQRORJLH&026HVWHSUH]HQWDW vQILJ

&RQVWUXF LH&HOHGRX WUDQ]LVWRDUH026SXVHvQSDUDOHOVXQW71 cu canal indus de tip n iar T2 cu canal industip p. Fiecare tranzistor are FRQVWUXF LH VLPHWULF SXWkQG conduce în ambele sensuri. CeleGRX WUDQ]LVWRDUHVXQWFRPDQGDWHvQJULO GHVHPQDOHFRPSOHPHQWDUHQRWDWH&/UHVSHFWLYCL

Tranzistorul T1,FXFDQDOQDUHDFHODúL VXEVWUDWGHWLSSFXUHVWXOSRU LORU ORJLFHFXFDUHHVWHSHFKLS6XEVWUDWXOSHVWHOHJDWODFHOPDLQHJDWLYSRWHQ LDO vQILJXU HVWHPDVD7UDQ]LVWRUXOHVWHFRPDQGDWGHVHPQDOXO&/úLSRDWHILGHVFKLVGDF SHJULODVDVHDSOLF SRWHQ LDOSR]LWLYDGLFpentru semnal CL=1.

14

Tranzistorul T2,FXFDQDOSDUHDFHODúLVXEVWUDWGHWLSQFXUHVWXOSRU LORUORJLFH6XEVWUDWXOQHVWHOHJDWODFHOPDLSR]LWLYSRWHQ LDO vQILJXU HVWH9DD . Tranzistorul este comandat de semnalul

CL úLSRDWHILGHVFKLVGDF SHJULODVDVHDSOLF SRWHQ LDOVF ]XWDGLF SHQWUXVHPQDO 0CL = .

Fig. 13. Poarta de transmisie CMOS

)XQF LRQDUH

'DF VHDSOLF VHPQDO&/=0 ( implicit 1CL = DPEHOHWUDQ]LVWRDUHúL71úL72VXQWEORFDWHúLvQWUH LQWUDUH úL LHúLUH VH UHDOL]HD] R UH]LVWHQ IRDUWH PDUH GH RUGLQXO 9 Ω VLWXD LH FDUH VHQRWHD] FX5OFF.'DF OD LQWUDUHDGHFRPDQG VHVHPQDODSOLF &/=DPEHOH WUDQ]LVWRDUHVXQWGHVFKLVHúL vQWUHLQWUDUHúLLHúLUHVHUHDOL]HD] RUH]LVWHQ PLF QRWDW 5ON9DORDUHDDFHVWHLUH]LVWHQ HGHSLQGHGHdimensiunea tranzistoarelor, de tensiunea de alimentare VDDúLGHYDORDUHDWHQVLXQLLDSOLFDWHSHLQWUDUH8]XDOSHQWUXSRU LOHGHWUDQVPLVLHGLQVHULDUH]LVWHQ D5ON are valori de 50-150 Ω.

2DQDOL] DWHQW DFRQGXF LHL vQIXQF LHGHYDORDUHDWHQVLXQLLDSOLFDWHODLQWUDUHSXQHvQHYLGHQIDSWXOF SHQWUXWHQVLXQHDGHLQWUDUHDYkQGYDORULGHPLMORF8P < UIN < VDD - UP conduc ambeletranzistoare în timp ce pentru 0 < UIN < UP conduce numai T2 (tranzistorul cu canal p), iar pentruVDD - UP < UIN < VDD conduce numai T1YH]LGLIHUHQ DID GHSRDUWDGHWUDQVPLVLH026

)RORVLQGGRX WUDQ]LVWRDUHFRPSOHPHQWDUHILHFDUHFXFRQVWUXF LHVLPHWULF SRDUWDGHWUDQVPLVLHCMOS este ELGLUHF LRQDO SXWkQG FRQGXFH FXUHQW vQ DPEHOH VHQVXUL vQ DFHVW IHO LQWUDUHD úLLHúLUHDILLQGLQWHUVFKLPEDELOHÌQIDSWSRDUWDGHWUDQVPLVLH&026DUHIXQF LRQDUHDXQXLFRPXWDWRU.SXWkQGUHDOL]DXQH[FHOHQWraport ROFF/RON GH RUGLQXO GH P ULPH 7 (printre cele mai performante comutatoareelectronice).

3RDUWDGHWUDQVPLVLH&026SRDWHWUDQVPLWHDWkWVHPQDOH ORJLFHFkWúLanalogice FXFRQGL LDFDDFHVWHDV VH vQFDGUH]H vQ LQWHUYDOXO±9DD ÌQFD]XOXWLOL] ULLGUHSW FRPXWDWRU vQ OHJ WXU FXsemnale analogice bipolare H[LVW SRU L GH WUDQVPLVLH VSHFLDOH FDUH DX OHJDW VXEVWUDWXO S ODSRWHQ LDO QHJDWLY PDL QHJDWLY GHFkW DOWHUQDQ D QHJDWLY D VHPQDOXOXL ELSRODU (YLGHQW úL ODDFHVWHDFRPDQGDSRU LLVHG FXVHPQDOXOORJLF&/úLCL de nivele CMOS.

15

2.2. 3RU L&026

3RUQLQGXVHGHODSRDUWDIXQGDPHQWDO &026VHSRDWHJHQHUDFXXúXULQ RvQWUHDJ IDPLOLHGHFLUFXLWHORJLFHÌQFHOHFHXUPHD] VHYRUSUH]HQWDSULQFLSDOHOHWLSXULGHSRU L

2.2.1. Poarta SAU-NU6FKHPD HOHFWULF SHQWUX SRDUWD 125 FX GRX LQWU UL UHDOL]DW vQ WHKQRORJLH &026 HVWHSUH]HQWDW vQILJ

&RQVWUXFWLY VH UHPDUF SODVDUHD vQ SDUDOHO D FHORU GRX WUDQ]LVWRDUHnMOS notate T1A úL71B, în timp ce tranzistoarele pMOS T2A úL 72B

sunt înseriate.)XQF LRQDUHDSRU LLHVWHXUP WRDUHD'DF $=B= DPEHOH WUDQ]LVWRDUH Q026 VXQW EORFDWH úL DPEHOHWUDQ]LVWRDUHS026VXQWGHVFKLVH/DLHúLUHVHRE LQHORJLF'DF FHOSX LQXQD GLQ LQWU UL DUH ORJLF GH H[HPSOX$ DWXQFL WUDQ]LVWRUXOQ026 FRUHVSXQ] WRU HVWH GHVFKLV 71A în exemplul considerat), iartranzistorul pMOS respectiv este blocat (T2A /D LHúLUH VH RE LQH logic.)XQF LRQDUHDGHVFULV FRUHVSXQGHIXQF LHL6$818

Fig. 14. Circuit SAU-NU

&LUFXLWXOSRDWHIL LPHGLDWH[WLQVDG XJkQGSHQWUXILHFDUHQRX LQWUDUHDSRU LLFkWHRSHUHFKHGHWUDQ]LVWRDUH026XQXOQ026vQSDUDOHOFXFHOHODOWHúLXQXOS026vQVHULDW

2.2.2. 3RDUWDù,18

ÌQILJXUDHVWHSUH]HQWDW VFKHPDSRU LLù,18

6H UHPDUF FRQVWUXF LDGXDO ID GH SRDUWD 6$818±SODVDUHD vQ SDUDOHO D WUDQ]LVWRDUHORU S026 úL vQ VHULH DtranzistoarelornMOS.)XQF LRQDUHDHVWHvQFRQVHFLQ 'DF FHOSX LQXQDGLQLQWU ULHVWHSHORJLFWUDQ]LVWRUXOQ026 FRUHVSXQ] WRU HVWH EORFDW vQ VFKLPE WUDQ]LVWRUXOS026UHVSHFWLYHVWHGHVFKLVúLODLHúLUHVHRE LQHORJLF'DF DPEHOH LQWU UL VXQW vQ ORJLF DWXQFL DPEHOHWUDQ]LVWRDUHQ026VXQWGHVFKLVH úL FHOHS026EORFDWH/DLHúLUHVHRE LQHORJLFùLvQDFHVWFD]H[WLQGHUHDIXQF LHLVHIDFHSULQDG XJDUHDunei perechi de tranzistoare complementare.

2EVHUYD LH &LUFXLWHOH ù,18 úL 6$818 UHDOL]DWH vQ VHULD SRW DYHD DWkW LQWU ULOH FkW úLLHúLULOHEXIHUDWH

Fig.15. Circuit SI-NU

16

Fig. 16 . Circuite SAU-NU , SI-NU buferate

2.2.3. Poarta SAU-EXCLUSIV

Fig. 17. Poarta SAU-EXCLUSIV

,PSHPHQWDUHDGLQILJXUP UHúWHvQGHDSURDSHH[SUHVLDORJLF )XQF LRQDUHDSRDWHILXUP ULWSHDFHDVW FDOHGHVWXOGHXúRU

ÌQ ILJVDXSUH]HQWDWDOWHYDULDQWHGH LPSOHPHQWDUHDSRU LL;25 vQ FDUH VH IDFH DSHO úL ODXWLOL]DUHDSRU LLGHWUDQVPLVLHùLIXQF LRQDUHDDFHVWRUDSRDWHILXUP ULW I U SUREOHPH$VWIHOvQFD]XO SULPXOXL FLUFXLW VH REVHUY F YDULDELOD $ FRPDQG vQ RSR]L LH FHOH GRX SRU L GHWUDQVPLVLH/D LQWUDUHD DFHVWRUD VH DSOLF YDULDELOD% úL UHVSHFWLY QHJDWD DFHVWHLD'DF $ DWXQFL HVWH YDOLGDW SULPD SRDUW GH WUDQVPLVLH SULQ FDUH OD LHúLUH DMXQJH % 'DF $ HVWHYDOLGDW FHDODW SRDUW GHWUDQVPLVLHúLODLHúLUHDMXQJHB .

3HQWUXFHDGHDGRXDYDULDQW VHREVHUY F YDULDELOD%SXUúLVLPSOXDF LRQHD] FDÄDOLPHQWDUH´SHQWUX LQYHUVRUXO IRUPDW FX FHOH GRX WUDQ]LVWRDUH FRPSOHPHQWDUH $VWIHO GDF % DWXQFLLQYHUVRUXO HVWH DOLPHQWDW úL WRW % EORFKHD] SRDUWD GH WUDQVPLVLH 9DULDELOD $ DSOLFDW ODLQYHUVRU HVWH QHJDW úL OD LHúLUH DMXQJH A 'DF % DWXQFL DPEHOH WUDQ]LVWRDUH DOH

17

LQYHUVRUXOXL VXQW EORFDW ÄQX VXQW DOLPHQWDWH´ vQ VFKLPE SRDUWD GH WUDQVPLVLH HVWH GHVFKLV 9DULDELOD$SULQSRDUWDGHWUDQVPLVLHDMXQJHODLHúLUH

Fig. 18. Variante de realizare pentru SAU-EXCLUSIV

2.2.4. &LUFXLWFXWUHLVW ULÌQFD]XOFLUFXLWHORU ORJLFHDYkQGHWDMHGH LHúLUH vQ FRQWUDWLPS FLUFXLWH77/ úL&026QXHVWHSHUPLV OHJDUHD vPSUHXQ D LHúLULORUÌQVFKLPE IRDUWHXúRUSRDWH IL UHDOL]DWXQFLUFXLW ORJLFFXWUHLVW ULILJ

)LJ'RX YDULDQWHGHFLUFXLWQHLQYHVRUFXWUHLVW UL

ÌQILJVXQWSUH]HQWDWHGRX YDULDQWHGHSRU LQHLQYHUVRDUHFXWUHLVW UL9DULDQWD D HVWH FLUFXLWXO úL IXQF LRQHD]astfel:GDF VH DSOLF ORJLF OD LQWUDUHD GH YDOLGDUH

',6 GLVDEOHDGLF ',6= 0, atunci poarta P1

DUHODLHúLUHVLPEROXOFDUHHVWHHOHPHQWQHXWUXOD LQWUDUHDSRU LL6,18 LDUSRDUWD32DSOLF care este tot element neutru, pentru poarta6$8183HFHDODOW LQWUDUHDSRU LORU33úL34

)LJ3RDUWDFXWUHLVW ULVLPEROL]DUHúLWDEHOGHDGHY U

18

VH DSOLF YDULDELOD $ OD DPEHOH SRU L OD LHúLUH YD UH]XOWD A &HORU GRX WUDQ]LVWRDUHcomplementare T1úL72OLVHDSOLF vQJULO DFHODúLVLPEROA FDúLFXPDUILOHJDWHvPSUHXQ úLDUFRQVWLWXLXQLQYHUVRU$FHVWHDYRUDF LRQDvQFRQVHFLQ úLODLHúLUHUH]XOW $'DF ',6=DWXQFL LHúLUHDSRU LLù,18HVWHúLGHFL WUDQ]LVWRUXO72 va fi blocat indiferent deYDULDELOD$ODLHúLUHDSRU LL6$818YDILúLGHFLúL71VHEORFKHD] LQGLIHUHQWGHYDULDELOD$%ORFDUHDFHORUGRX WUDQ]LVWRDUH GXFH ODRE LQHUHDXQHL LPSHGDQ HGH LHúLUH IRDUWHPDUH VWDUHQXPLW Ä+LJK=´VDXVWDUHGHLPSHGDQ PDUHÌQYDULDQWDEVHREVHUY F ',6 GHVFKLGHWUDQ]LVWRDUHOH72úL73FHHDFHGXFHODRIXQF LRQDUHQRUPDO D FLUFXLWXOXL vQ WLPS FH',6 EORFKHD] FHOH GRX WUDQ]LVWRDUH72 úL 73 ducând laVWDUHDGHLPSHGDQ PDUHLQGLIHUHQWGHUHVWXOFLUFXLWXOXLÌQVHULD&026VXQWUHDOL]DWHúLDOWHFLUFXLWHFXWUHLVW ULLQYHUVRDUHELVWDELOHHWF

2EVHUYD LH : în cazul circuitelor CMOS starea dePDUH LPSHGDQ OD LHúLUH SRDWH IL E LQXW úL FXDMXWRUXO XQHL SRU L GH WUDQVPLVLH FRQHFWDW vQWUHLHúLUHD XQXL FLUFXLW ORJLF SURSULX]LV úL LHúLUHDDQVDPEOXOXL%ORFkQGDFHDVW SRDUW GHWUDQVPLVLHVHSRDWHUHDOL]DFRQGL LDGHLPSHGDQ PDUH

2.3. Circuite BiCMOS

3HUIRUPDQ HOHFLUFXLWHORULQWHJUDWHGLJLWDOH&026VXQWOLPLWDWHvQVSHFLDOGDWRULW vQWkU]LHULORUvQSURSDJDUHDVHPQDOXOXLSURYRFDW GHFDSDFLW LOHSDUD]LWHVSHFLILFHEXVXULORUGHGDWH ÌQXOWLPLQVWDQ YLWH]DHVWH OLPLWDW GHVODEDFDSDELOLWDWHDSRU LORU&026GHDDVLJXUDFXUHQ LPDUL KLJK FXUUHQWGULYLQJ FDSDELOLW\ QHFHVDUL SHQWUX UDSLGD vQF UFDUHGHVF UFDUH D VDUFLQLORFDSDFLWLYH2VROX LHSHQWUXUH]ROYDUHDDFHVWHLSUREOHPHRRIHU FLUFXLWHOH%L&026

'HQXPLUHD SURYLQH GH OD IDSWXO F FLUFXLWHOH FRQ LQ DWkW WUDQ]LVWRDUH ELSRODUH %-7 ± ELSRODUMXQFWLRQ WUDQVLVWRU FkW úL WUDQ]LVWRDUH 026 FRPSOHPHQWDUH 7UDQ]LVWRUXO ELSRODU IRORVLW ODLHúLUHDDFHVWRUFLUFXLWHDVLJXU RPDUHFDSDELOLWDWHGHDFRQGXFHFXUHQ L vQWLPSFHGLVSR]LWLYXO&026 DVLJXU XQ FRQVXP UHGXV GHQVLWDWH PDUH GH LQWHJUDUH úL R WHKQRORJLH PDL VLPSO 6HSRDWHVSXQHF RFRQILJXUD LH%L&026UHXQHúWHSHDFHODúLFKLSÄFHHVWHPDLEXQvQGRX OXPL´

8Q GH]DYDQWDM PDMRU DO WHKQRORJLHL %L&PRV HVWH GDWRUDW FUHúWHULL FRPSOH[LW LL SURFHVXOXL GHIDEULFD LHILJ5HDOL]DUHDXQXLWUDQ]LVWRUELSRODUQHFHVLW PDLPXOWHHWDSHGHFkWSDúLLXWLOL]D Lîntr-un proces CMOS. Evident, o serie de etape sunt realizate simultan astfel încât, în final,SURFHVXOGHIDEULFD LH%L&026QHFHVLW QXPDLHWDSHVXSOLPHQWDUHID GHXQSURFHV&026standard.

)LJ9DULDQW GHSRDUW FXWUHLVW UL

19

)LJ7UDQ]LVWRUELSRODUúL026

2VFKHP WLSLF GHLQYHUVRU%L&026HVWHSUH]HQWDW vQILJ

Fig. 22. Inversor BiCMOS

&RQVWUXF LH&LUFXLWXO FRQ LQH WUHL WUDQ]LVWRDUH Q02671, T2 úL 73 , un tranzistor pMOS, T2 úL FHOH GRXtranzistoare bipolare Q1, Q2GHODLHúLUH7UDQ]LVWRDUHOHQ02673úL74MRDF UROXOXQRUUH]LVWHQ HGLQYDULDQWDGHSULQFLSLXDVLJXU QGRFDOHGHFXUHQWGHUH]LVWHQ PLF SHQWUXHOLPLQDUHDVDUFLQLLVWRFDWHvQED]DWUDQ]LVWRUXOXLELSRODUúLFRQWULEXLQGvQDFHVWIHOODFUHúWHUHDYLWH]HLGHFRPXWD LHDcircuitului (de fapt T3úL74DF LRQHD] FDUH]LVWHQ HGLQDPLFH UH]LVWHQ GHYDORDUHPDUHFkQGWUDQ]LVWRUXO ELSRODU FRUHVSXQ] WRU HVWH GHVFKLV úL UHVSHFWLY UH]LVWHQ PLF DWXQFL FkQG WUHEXLHblocat tranzistorul bipolar).'HDVHPHQHDVHREVHUY FHOHGRX WUDQ]LVWRDUH026FRPSOHPHQWDUHQRWDWH71úL72, comandateGHVHPQDOXOGHLQWUDUHúLFDUHODU QGXOORUFRPDQG FHOHGRX WUDQ]LVWRDUHELSRODUH41úL42.)XQF LRQDUHPentru UIN = 0 tranzistorul nMOS T1 este blocat iar tranzistorul pMOS T2 este deschis.Deschiderea lui T2 DVLJXU FXUHQW vQ ED]D OXL 41 DVLJXUkQG GHVFKLGHUHD DFHVWXLD úL vQ SOXVGHVFKLGHUHDúLSHQWUXWUDQ]LVWRUXO Q02673 ceea ce duce la blocare lui Q2/D LHúLUH VHRE LQHnivel H având tensiunea UOH = VCC – 0,7VGLIHUHQ DVHGDWRUHD] WHQVLXQLL9BE a tranzistoruluiQ1 conductor).

20

Crescând UIN , VLWXD LDVHPHQ LQHSkQ FkQG8IN atinge valoarea UP1 + VBE, moment în care sedeschide atât T1FkWúL428UPHD] RUHJLXQHvQFDUHFRQGXFDWkW41FkWúL42 vQUHJLXQHDDFWLY

GLUHFW Când UINFUHúWHSHVWHYDORDUHD9CC + UP2 ( T2 este tranzistorFXFDQDOLQGXVWLSSúLDUHWHQVLXQHDGHSUDJQHJDWLY WUDQ]LVWRUXO72 seEORFKHD] FHHDFHGXFHúLODEORFDUHDOXL41/DLHúLUH42FRQWLQX DILGHVFKLVDWkWWLPSFkWPDLGHVFDUF VDUFLQD FDSDFLWLY FkWPDL H[LVWFLUFXOD LHGHFXUHQW7HQVLXQHDGH OD LHúLUHHVWHUOL = 0,7V (egal cuVBEGHRDUHFHED]DúLFROHFWRUXOOXL42 sunt practic scurtcircuitate prinT1).$VSHFWXO FDUDFWHULVWLFLL GH WUDQVIHU SUHFXP úL WHQVLXQHD GH SUDJ DLQYHUVRUXOXLVHPRGHOHD] GLQGLPHQVLRQDUHDWUDQ]LVWRDUHORU71úL72.6HVXEOLQLD] YDORDUHDFHORUGRX QLYHOHORJLFH8OHúL8OLGLIHULWHIDGHLGHDOFHHDFHPLFúRUHD] LPXQLWDWHDOD]JRPRWDFLUFXLWXOXL

ÌQ ILJ VXQW SUH]HQWDWH úL DOWH FLUFXLWH %L&026VSHFLILF ILLQGDFHHDúLVWUXFWXU LQWHUQ &026úLHWDMXOGHLHúLUHELSRODU

Fig. 24. Circuite BiCMOS

7UDQIRUPDUHDLQYHUVRUXOXLvQFLUFXLW6$818úLUHVSHFWLY6,18VHIDFHGXS DFHOHDúLUHJXOLFDla circuitele CMOS standard.Pentru circuitul SAU-NU, tranzistoarele T1, T2úL73GHODLQYHUVRUVHWUDQVIRUP vQFkWHGRXGRX WUDQ]LVWRDUHGHDFHODúLWLSFRPDQGDWHGHFHOHGRX LQWU ULGXS UHJXODVSHFLILF FLUFXLWXOXLSAU-NU : tranzistoarele pMOS sunt înseriate ( vezi T3 , T4 provenite din T2 de la inversor ) iartranzistoarele nMOS sunt puse în paralel ( T3GHODLQYHUVRUVHWUDQVIRUP vQ71 úL72 respectiv T1de la inversor în T5úL76). Tranzistorul T7 din baza lui Q2U PkQHQHPRGLILFDWúLFXDFHODúLUROEORFKHD] SH42vQVLWXD LDQLYHO+ODLHúLUHPentru circuitul SI-NU, tranzistoarele T1, T2 úL73GH OD LQYHUVRUVH WUDQVIRUP GH DVHPHQHD vQFkWHGRX GRX WUDQ]LVWRDUHGHDFHODúLWLSUHVSHFWkQGGHGDWDDFHDVWDUHJXODVSHFLILF FLUFXLWXOXLSAU-NU : tranzistoarele pMOS sunt puse în paralel ( T3 , T4 provenite din T2 de la inversor )iar tranzistoarele nMOS sunt înseriate ( T3GHODLQYHUVRUVHWUDQVIRUP vQ71 úL72 respectiv T1 de

Fig. 23. Caracteristica de tranferpentru un circuit BiCMOS

21

la inversor în T5úL76ùLGHGDWDDFHDVWDWUDQ]LVWRUXO77 din baza lui Q2U PkQHQHPRGLILFDWúLDVLJXU EORFDUHDDFHVWXLDvQVLWXD LDQLYHO+ODLHúLUH

ÌQ vQFKHLHUHD DFHVWXL FDSLWRO SUH]HQW P GRX JUDILFH FDUH LOXVWUHD] FRPSDUDWLY XQHOHSHUIRUPDQ HDOHFLUFXLWHORU%L&026

)LJDvQWkU]LHUHDVSHFLILF XQRUFLUFXLWHORJLFHESURGXVXOSXWHUHÂvQWkU]LHUHSHQWUXXQHOHfamilii de circuite logice utilizând tehnologia de 2 P